US 12,469,696 B2
Method of forming 3-dimensional spacer
Robert D. Clark, Fremont, CA (US)
Assigned to Tokyo Electron Limited, Tokyo (JP)
Filed by Tokyo Electron Limited, Tokyo (JP)
Filed on Aug. 23, 2022, as Appl. No. 17/893,796.
Claims priority of provisional application 63/239,837, filed on Sep. 1, 2021.
Prior Publication US 2023/0061683 A1, Mar. 2, 2023
Int. Cl. H01L 21/02 (2006.01); H01L 21/311 (2006.01)
CPC H01L 21/0228 (2013.01) [H01L 21/02164 (2013.01); H01L 21/0217 (2013.01); H01L 21/02255 (2013.01); H01L 21/31116 (2013.01)] 17 Claims
OG exemplary drawing
 
1. A method of processing a substrate, the method comprising:
loading the substrate in a processing chamber, the substrate having a raised feature with at least two sidewalls exposed on a surface of the raised feature;
depositing a first layer over the substrate adjacent to the raised feature, the first layer covering a first portion of the at least two sidewalls;
depositing a second layer over the first layer adjacent to the raised feature, the second layer covering a second portion of the at least two sidewalls, wherein the first layer and the second layer comprise different materials;
depositing a third layer over the second layer and the raised feature, the third layer covering a third portion of the at least two sidewalls and a top surface of the raised feature, wherein the second layer and the third layer comprise different materials;
performing an anisotropic dry etching that removes portions of the second layer and the third layer, a remainder of the second layer forming a second sidewall spacer and a remainder of the third layer forming a third sidewall spacer; and
performing an isotropic etching that selectively removes the second sidewall spacer to expose portions of the at least two sidewalls of the raised feature.