US 12,469,694 B2
Film forming method
Kiwamu Ito, Yamanashi (JP); Yamato Tonegawa, Yamanashi (JP); and Takeshi Oyama, Yamanashi (JP)
Assigned to Tokyo Electron Limited, Tokyo (JP)
Filed by Tokyo Electron Limited, Tokyo (JP)
Filed on Apr. 3, 2023, as Appl. No. 18/194,722.
Claims priority of application No. 2022-068325 (JP), filed on Apr. 18, 2022.
Prior Publication US 2023/0335394 A1, Oct. 19, 2023
Int. Cl. H01L 21/02 (2006.01); C23C 16/34 (2006.01); C23C 16/36 (2006.01)
CPC H01L 21/02271 (2013.01) [C23C 16/345 (2013.01); C23C 16/36 (2013.01); H01L 21/02167 (2013.01); H01L 21/0217 (2013.01)] 9 Claims
OG exemplary drawing
 
1. A film forming method for forming a silicon nitride film on a substrate, comprising:
supplying a silicon-containing gas into a processing chamber accommodating the substrate; and
supplying a nitrogen-containing gas into the processing chamber accommodating the substrate after the supplying the silicon-containing gas,
wherein an internal pressure of the processing chamber during the supplying the nitrogen-containing gas is set higher than an internal pressure of the processing chamber during the supplying the silicon-containing gas.