| CPC H01L 21/02115 (2013.01) [B05D 1/60 (2013.01); B05D 3/107 (2013.01); C23C 16/26 (2013.01); H01L 21/0271 (2013.01); H01L 21/31111 (2013.01)] | 23 Claims |

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1. A method of forming a structure comprising a hard mask formed of a carbon-containing layer on a surface of a substrate, the method comprising the steps of:
providing a substrate on a susceptor within a reaction chamber of a reactor;
heating a carbon precursor to produce a vaporized gas comprising carbon-containing molecules;
providing the vaporized gas to the reaction chamber though a gas distribution device coupled to a plasma power source; and
polymerizing the carbon-containing molecules by applying a plasma power from the plasma power source to the gas distribution device to form the carbon-containing layer on the surface of a substrate,
wherein the susceptor forms an electrode that is coupled to ground,
wherein the carbon precursor comprises a carbon compound comprising one or more sp3 hybridization carbon bonds,
wherein the carbon compound is a solid at normal temperature and pressure,
wherein the carbon compound is dissolved in a solvent, and
wherein the carbon compound comprises 10 or more carbon atoms.
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