| CPC H01J 37/32917 (2013.01) [G01N 21/718 (2013.01); H01J 49/42 (2013.01); H01L 21/67092 (2013.01); H01J 2237/24571 (2013.01); H01J 2237/336 (2013.01); H01L 24/80 (2013.01); H01L 2224/8001 (2013.01); H01L 2224/80201 (2013.01)] | 7 Claims |

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1. A surface modifying apparatus configured to modify a bonding surface of a substrate to be bonded to another substrate by plasma of a processing gas, the surface modifying apparatus comprising:
a processing vessel accommodating the substrate therein;
a measuring unit configured to measure a value indicating an amount of moisture in the processing vessel; and
a controller configured to control individual components,
wherein the controller determines whether or not bonding strength between the substrate and the another substrate, when it is assumed that the substrate modified in the processing vessel is bonded to the another substrate, is good based on the value indicating the amount of moisture in the processing vessel measured by the measuring unit,
the measuring unit acquires light emission data of the processing gas supplied into the processing vessel, and measures a peak value appearing at a specific wavelength of the light emission data as the value indicating the amount of moisture in the processing vessel, and
the controller determines whether or not the bonding strength is good based on the peak value appearing at the specific wavelength of the light emission data acquired by the measuring unit.
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