US 12,469,679 B2
Substrate treating apparatus
Chin-Wook Chung, Seoul (KR); and Yeong-Min Lim, Seoul (KR)
Assigned to IUCF-HYU (INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY), Seoul (KR)
Filed by IUCF-HYU (INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY), Seoul (KR)
Filed on Sep. 3, 2020, as Appl. No. 17/011,145.
Claims priority of application No. 10-2019-0110057 (KR), filed on Sep. 5, 2019.
Prior Publication US 2021/0074514 A1, Mar. 11, 2021
Int. Cl. H01J 37/32 (2006.01)
CPC H01J 37/32174 (2013.01) [H01J 37/32715 (2013.01)] 2 Claims
OG exemplary drawing
 
1. A substrate treating apparatus comprising:
a chamber;
a susceptor located at an inner side of the chamber and configured to support a substrate subject to a process;
a grounded electrode plate having a pre-set area and located at an upper area inside the chamber;
a radio frequency (RF) power supply configured to provide power for plasma generation and connected to the susceptor;
a matching network configured to perform impedance matching between the chamber and the RF power supply, and located on a first conducting wire through which the RF power supply is connected to the susceptor;
a variable inductor as a plasma control member located on a second conducting wire, wherein the second conducting wire is grounded, and is branched from the first conducting wire at a point adjacent to the susceptor to reduce parasitic impedance; and
wherein, in response to a measurement of impedance looking towards the plasma chamber an inductance the variable inductor is adjusted to maximize a resistance value at a branch point that the second conducting wire is branched from the first conducting wire, to cause the plasma control member and the chamber to be in a resonant state,
to increase a density of the plasma.