US 12,469,676 B2
In-situ etch rate or deposition rate measurement system
Steffen Guertler, Böhlen (DE); Mario Berlinger, Leipzig (DE); and Ralf Sperling, Leipzig (DE)
Assigned to Bühler Alzenau GmbH, Alzenau (DE)
Appl. No. 17/800,565
Filed by BÜHLER ALZENAU GMBH, Alzenau (DE)
PCT Filed Feb. 3, 2021, PCT No. PCT/EP2021/052552
§ 371(c)(1), (2) Date Aug. 18, 2022,
PCT Pub. No. WO2021/165043, PCT Pub. Date Aug. 26, 2021.
Claims priority of application No. 20158398 (EP), filed on Feb. 20, 2020.
Prior Publication US 2023/0139375 A1, May 4, 2023
Int. Cl. H01J 37/304 (2006.01); G01B 11/06 (2006.01)
CPC H01J 37/304 (2013.01) [G01B 11/0675 (2013.01); H01J 2237/30466 (2013.01)] 15 Claims
OG exemplary drawing
 
1. System for in-situ ion beam etch rate or a deposition rate measurement, comprising:
a vacuum chamber;
an ion beam source configured to direct an ion beam onto a first surface of a sample located within the vacuum chamber and to etch the first surface of the sample with an etch rate; or
a material source (111a) configured to deposit material onto a first surface of a sample located within the vacuum chamber with a deposition rate; and
an interferometric measurement device located at least partially within the vacuum chamber and configured to direct light onto a second surface of the sample and to determine the etch rate of the ion beam or the deposition rate of the deposited material in-situ based on light reflected from the sample.