US 12,469,630 B2
Inductor and transformer semiconductor devices using hybrid bonding technology
Georgios Dogiamis, Chandler, AZ (US); Qiang Yu, Saratoga, CA (US); Adel Elsherbini, Tempe, AZ (US); and Kimin Jun, Portland, OR (US)
Assigned to Intel Corporation, Santa Clara, CA (US)
Filed by Intel Corporation, Santa Clara, CA (US)
Filed on Jun. 25, 2021, as Appl. No. 17/359,165.
Prior Publication US 2022/0415555 A1, Dec. 29, 2022
Int. Cl. H01L 23/64 (2006.01); H01F 27/28 (2006.01); H01L 23/522 (2006.01); H01L 25/00 (2006.01); H01L 25/065 (2023.01); H10D 1/20 (2025.01)
CPC H01F 27/2804 (2013.01) [H01L 23/5227 (2013.01); H01L 23/645 (2013.01); H01L 25/0657 (2013.01); H01L 25/50 (2013.01); H10D 1/20 (2025.01)] 12 Claims
OG exemplary drawing
 
1. A semiconductor device comprising:
a first silicon die including a first base semiconductor substrate and a first back-end stack, the first silicon die including a first backend layer having a first thickness that is between 0.1 and 5 micrometers;
a second silicon die including a second base semiconductor substrate and a second back-end stack, the second silicon die including a second backend layer having a second thickness that is between 0.1 and 5 micrometers;
a first standoff substrate having a first outer surface and a second outer surface opposite the first outer surface, the first standoff substrate between the first silicon die and the second silicon die, the first standoff substrate physically separate from the first silicon die, the first outer surface of the first standoff substrate in direct contact with a surface of the first silicon die via a first hybrid bond coupling, the first standoff substrate including a first single layer of material including at least one of a polymer, alumina, or aluminum nitride, the first single layer of material having a second thickness that is between 5 and 400 micrometers;
a second standoff substrate having a third outer surface and a fourth outer surface opposite the third outer surface, the second standoff substrate between the first standoff substrate and the second silicon die, the second standoff substrate physically separate from the second silicon die, the fourth outer surface of the second standoff substrate in direct contact with a surface of the second silicon die via a second hybrid bond coupling, the second standoff substrate including a second single layer of material including at least one of a polymer, alumina, or aluminum nitride, the first single layer of material having a fourth thickness that is between 5 and 400 micrometers;
a magnetic material, the magnetic material adjacent the first standoff substrate and the second standoff substrate; and
a conductive layer adjacent at least one of the first standoff substrate or the second standoff substrate.