US 12,469,572 B2
Memory device, memory system, and method of operating the same
Jinchi Han, Wuhan (CN)
Assigned to YANGTZE MEMORY TECHNOLOGIES CO., LTD., Wuhan (CN)
Filed by YANGTZE MEMORY TECHNOLOGIES CO., LTD., Wuhan (CN)
Filed on Nov. 7, 2023, as Appl. No. 18/387,784.
Claims priority of application No. 202311440894.1 (CN), filed on Oct. 31, 2023.
Prior Publication US 2025/0140327 A1, May 1, 2025
Int. Cl. G11C 7/00 (2006.01); G11C 16/08 (2006.01); G11C 16/10 (2006.01); G11C 16/26 (2006.01); G11C 16/34 (2006.01)
CPC G11C 16/3459 (2013.01) [G11C 16/08 (2013.01); G11C 16/102 (2013.01); G11C 16/26 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method for operating a memory device, comprising:
storing first page data in a cache latch;
storing the first page data in a first data latch and storing last page data in a second data latch;
programming memory cells of a first page of a memory array with the first page data;
storing the first page data in the second data latch and storing second page data in the first data latch; and
programming memory cells of a second page with a second page data.