US 12,469,324 B2
Semiconductor device with biofet and biometric sensors
Ching-Hui Lin, Taichung (TW); Chun-Ren Cheng, Hsinchu (TW); Shih-Fen Huang, Jhubei (TW); and Fu-Chun Huang, Zhubei (TW)
Assigned to Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on Jun. 13, 2024, as Appl. No. 18/742,009.
Application 17/234,641 is a division of application No. 16/656,882, filed on Oct. 18, 2019, granted, now 10,984,211, issued on Apr. 20, 2021.
Application 18/742,009 is a continuation of application No. 17/234,641, filed on Apr. 19, 2021, granted, now 12,361,745.
Prior Publication US 2024/0331439 A1, Oct. 3, 2024
Int. Cl. G06V 40/13 (2022.01); G01N 27/414 (2006.01); H10D 30/01 (2025.01); H10N 30/30 (2023.01)
CPC G06V 40/1306 (2022.01) [G01N 27/4145 (2013.01); H10D 30/015 (2025.01); H10N 30/302 (2023.02)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a substrate comprising a first side and a second side opposite to the first side, wherein the substrate comprises a semiconductor layer;
a gate electrode disposed on the first side of the substrate;
source and drain regions disposed in the substrate;
a channel region disposed between the source region and the drain region; and
a piezoelectric sensor disposed on the second side of the substrate and adjacent to the gate electrode, wherein the piezoelectric sensor and the gate electrode are laterally separated from each other by a portion of the substrate.