US 12,468,232 B2
Etch bias characterization and method of using the same
Yongfa Fan, Sunnyvale, CA (US); Leiwu Zheng, San Jose, CA (US); Mu Feng, San Jose, CA (US); Qian Zhao, San Jose, CA (US); and Jen-Shiang Wang, Sunnyvale, CA (US)
Assigned to ASML NETHERLANDS B.V., Veldhoven (NL)
Filed by ASML NETHERLANDS B.V., Veldhoven (NL)
Filed on Jun. 8, 2023, as Appl. No. 18/207,642.
Application 18/207,642 is a continuation of application No. 16/484,582, granted, now 11,675,274, previously published as PCT/EP2018/054212, filed on Feb. 21, 2018.
Claims priority of provisional application 62/463,556, filed on Feb. 24, 2017.
Prior Publication US 2023/0314958 A1, Oct. 5, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. G03F 7/00 (2006.01); G03F 1/80 (2012.01)
CPC G03F 7/705 (2013.01) [G03F 1/80 (2013.01); G03F 7/70625 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method, comprising:
determining, by a hardware computer, an etch bias for a pattern to be etched using an etch step of a patterning process based on an etch bias model, the etch bias model comprising a mathematical term comprising a natural exponential function to the power of a parameter that is fitted or based on an etch time of the etch step; and
adjusting the patterning process based on the determined etch bias.