US 12,468,225 B2
Positive resist composition and pattern forming process
Jun Hatakeyama, Joetsu (JP)
Assigned to SHIN-ETSU CHEMICAL CO., LTD., Tokyo (JP)
Filed by Shin-Etsu Chemical Co., Ltd., Tokyo (JP)
Filed on Nov. 14, 2022, as Appl. No. 17/986,271.
Prior Publication US 2023/0152698 A1, May 18, 2023
Int. Cl. G03F 7/039 (2006.01); G03F 7/004 (2006.01); G03F 7/20 (2006.01); G03F 7/30 (2006.01)
CPC G03F 7/0392 (2013.01) [G03F 7/0048 (2013.01); G03F 7/2006 (2013.01)] 11 Claims
 
1. A positive resist composition comprising a base polymer end-capped with a group having any one of the formulae (a)-1 to (a)-3:

OG Complex Work Unit Chemistry
wherein X1 is a C1-C20 hydrocarbylene group which may contain at least one moiety selected from hydroxy, ether bond, ester bond, carbonate bond, urethane bond, lactone ring, sultone ring, nitro, cyano, nitrogen, and halogen,
R1 is hydrogen or a C1-C12 hydrocarbyl group,
X1 and R1 may bond together to form a C2-C10 aliphatic ring with the nitrogen atom to which they are attached,
R2 to R4 are each independently a C1-C4 alkyl group, R2 and R3 may bond together to form a ring with the carbon atom to which they are attached,
R5, R6 and R7 are each independently a C1-C8 aliphatic hydrocarbyl group or C6-C10 aryl group, which may contain at least one moiety selected from ether bond, ester bond, nitro, halogen, and trifluoromethyl,
RN1 and RN2 are each independently hydrogen, a C1-C10 alkyl group or C1-C10 alkoxycarbonyl group, the alkyl and alkoxycarbonyl groups may contain an ether bond,
the circle Ra is a C2-C10 alicyclic group containing the nitrogen atom,
the broken line designates a valence bond.