	US 12,468,224 B2
	Resist composition and patterning process
Jun Hatakeyama, Joetsu (JP)
Assigned to SHIN-ETSU CHEMICAL CO., LTD., Tokyo (JP)
Filed by Shin-Etsu Chemical Co., Ltd., Tokyo (JP)
Filed on Oct. 13, 2022, as Appl. No. 17/965,214.
Claims priority of application No. 2021-171649 (JP), filed on Oct. 20, 2021.
Prior Publication US 2023/0120132 A1, Apr. 20, 2023
Int. Cl. G03F 7/004 (2006.01); C08F 212/14 (2006.01); C08F 220/18 (2006.01); C08F 220/22 (2006.01); C08F 220/28 (2006.01); C08F 220/38 (2006.01); G03F 7/038 (2006.01); G03F 7/039 (2006.01)

CPC G03F 7/0045 (2013.01) [C08F 212/24 (2020.02); C08F 220/1806 (2020.02); C08F 220/1811 (2020.02); C08F 220/22 (2013.01); C08F 220/281 (2020.02); C08F 220/382 (2020.02); G03F 7/0382 (2013.01); G03F 7/0392 (2013.01)]

12 Claims

1. A resist composition comprising a base polymer and a quencher,

said quencher comprising a salt compound obtained from a nitrogen-containing compound having an iodine or bromine-substituted hydrocarbyl group, exclusive of iodine or bromine-substituted aromatic ring, bonded to the nitrogen atom via an ester bond-containing group and at least one compound selected from a fluorinated 1,3-diketone compound, fluorinated β-keto ester compound, and fluorinated imide compound.