US 12,468,218 B2
Method of fabricating semiconductor device
Heungsuk Oh, Bucheon-si (KR); Kyu-Bin Han, Incheon (KR); and Sangwook Kim, Yongin-si (KR)
Assigned to SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed by SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed on Jul. 12, 2022, as Appl. No. 17/812,005.
Claims priority of application No. 10-2021-0174627 (KR), filed on Dec. 8, 2021.
Prior Publication US 2023/0176469 A1, Jun. 8, 2023
Int. Cl. G03F 1/36 (2012.01); H01L 21/027 (2006.01); H01L 21/768 (2006.01)
CPC G03F 1/36 (2013.01) [H01L 21/027 (2013.01); H01L 21/768 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method of fabricating a semiconductor device, comprising:
performing an optical proximity correction (OPC) step on a layout to generate a correction pattern, the correction pattern having a curvilinear shape;
performing a mask rule check (MRC) step on the correction pattern to generate mask data; and
forming a photoresist pattern on a substrate using a photomask, which is manufactured based on the mask data,
wherein the MRC step comprises:
generating a width skeleton in the correction pattern;
generating a width contour, which satisfies a specification of a mask rule for a linewidth, from the width skeleton; and
adding the correction pattern and the width contour to generate an adjusting pattern.