US 12,468,217 B2
Mask blank, method of manufacturing transfer mask, and method of manufacturing semiconductor device
Hiroaki Shishido, Tokyo (JP); and Osamu Nozawa, Tokyo (JP)
Assigned to HOYA CORPORATION, Tokyo (JP)
Appl. No. 18/010,744
Filed by HOYA CORPORATION, Tokyo (JP)
PCT Filed Jun. 17, 2021, PCT No. PCT/JP2021/023031
§ 371(c)(1), (2) Date Dec. 15, 2022,
PCT Pub. No. WO2022/014248, PCT Pub. Date Jan. 20, 2022.
Claims priority of application No. 2020-121204 (JP), filed on Jul. 15, 2020.
Prior Publication US 2023/0259015 A1, Aug. 17, 2023
Int. Cl. G03F 1/32 (2012.01)
CPC G03F 1/32 (2013.01) 20 Claims
OG exemplary drawing
 
1. A mask blank comprising a structure where a thin film for pattern formation, a first hard mask film, and a second hard mask film are stacked in this order on a main surface of a substrate,
wherein the thin film for pattern formation contains a transition metal;
wherein the first hard mask film contains oxygen and one or more elements selected from silicon and tantalum;
wherein the second hard mask film contains a transition metal;
wherein a content of transition metal of the second hard mask film is less than a content of transition metal of the thin film for pattern formation;
wherein a region where the first hard mask film is formed on the main surface is smaller than a region where the thin film for pattern formation is formed; and
wherein the second hard mask film and the thin film for pattern formation are in contact with each other at least in part.