| CPC G03F 1/30 (2013.01) | 8 Claims |
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1. A method of manufacturing a phase shift mask, the method comprising;
forming a reflective layer on a substrate;
forming a lower layer on the reflective layer;
forming an upper layer for phase shift on the lower layer;
patterning first phase shift patterns and a second phase shift pattern from the upper layer and patterning device patterns overlapping with the first phase shift patterns and a frame pattern overlapping with the second phase shift pattern from the lower layer, by sequentially etching the upper layer and the lower layer, the frame pattern including alignment holes exposing portions of the reflective layer; and
selectively removing the second phase shift pattern from the frame pattern.
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