| CPC G01R 33/098 (2013.01) [G01R 33/0005 (2013.01); G01R 33/0023 (2013.01); G01R 33/093 (2013.01); H10N 50/10 (2023.02)] | 14 Claims |

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1. A magnetoresistive magnetic field sensor, comprising:
a first magnetoresistive element, a second magnetoresistive element, a third magnetoresistive element, and a fourth magnetoresistive element, with each of the first magnetoresistive element, the second magnetoresistive element, the third magnetoresistive element, and the fourth magnetoresistive element experiencing a respective change in conductance in response to an external magnetic field,
the four magnetoresistive elements being arranged in a Wheatstone full bridge circuit,
the first magnetoresistive element and the second magnetoresistive element, which respectively have an inverse behavior in relation to a change in conductance, being arranged in a first half bridge, and
the third magnetoresistive element and the fourth magnetoresistive element, which respectively have an inverse behavior in relation to a change in conductance, being arranged in a second half bridge,
the first magnetoresistive element, the second magnetoresistive element, the third magnetoresistive element, and the fourth magnetoresistive element having at least two different conductance values when no external magnetic field is present,
with in each case, two of the first magnetoresistive element, the second magnetoresistive element, the third magnetoresistive element, and the fourth magnetoresistive element having a same conductance if an external magnetic field with a predefined magnetic field strength is present.
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