US 12,467,990 B2
Magnetoresistance signal path compensation
Tyler Daigle, Scarborough, ME (US); Steven Daubert, Bedford, NH (US); Srujan Shivanakere, Nashua, NH (US); and Craig Hiller, North Andover, MA (US)
Assigned to Allegro MicroSystems, LLC, Manchester, NH (US)
Filed by Allegro MicroSystems, LLC, Manchester, NH (US)
Filed on Aug. 30, 2023, as Appl. No. 18/458,441.
Prior Publication US 2025/0076421 A1, Mar. 6, 2025
Int. Cl. G01R 33/09 (2006.01); G01R 33/00 (2006.01)
CPC G01R 33/098 (2013.01) [G01R 33/0052 (2013.01); G01R 33/0094 (2013.01)] 10 Claims
OG exemplary drawing
 
1. A magnetic field sensor, comprising:
a first set of MR elements forming a bridge to output a signal corresponding to an applied magnetic field having an orientation in a sensitive axis of the bridge;
a second set of MR elements that are immune to the applied magnetic field, wherein the second set of MR elements are configured to change in resistance due to temperature; and
a processor to compensate for a response of the first set of MR elements based on an output from the second set of MR elements.