US 12,467,989 B2
Magnetic sensor device
Wolfgang Raberg, Sauerlach (DE)
Assigned to Infineon Technologies AG, Neubiberg (DE)
Filed by Infineon Technologies AG, Neubiberg (DE)
Filed on Mar. 31, 2023, as Appl. No. 18/194,179.
Claims priority of application No. 102022108102.8 (DE), filed on Apr. 5, 2022.
Prior Publication US 2023/0324477 A1, Oct. 12, 2023
Int. Cl. G01R 33/09 (2006.01); H01L 29/76 (2006.01)
CPC G01R 33/098 (2013.01) 11 Claims
OG exemplary drawing
 
1. A magnetic sensor device, comprising:
a substrate spanning a plane; and
a plurality of series-connected tunnel magnetoresistance (TMR) resistance elements arranged on the substrate, wherein each TMR resistance element, of the plurality of series-connected TMR resistance elements, has at least one magnetic tunnel contact, and wherein each TMR resistance element, of the plurality of series-connected TMR resistance elements, has a same reference magnetization,
wherein the plurality of series-connected TMR resistance elements are arranged and interconnected on the substrate in such a way that an electric current flow direction in the plane relative to the same reference magnetization changes from a first direction in the plane to a second direction in the plane at least once along a current path through the plurality of series-connected TMR resistance elements.