| CPC G01N 27/002 (2013.01) [G01R 31/2601 (2013.01); H01L 22/14 (2013.01); H10D 64/037 (2025.01); G11C 29/006 (2013.01); H01L 22/30 (2013.01)] | 19 Claims |

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1. A test device for determining an effective work function, the test device comprising:
a test memory device including a memory layer and a gate electrode layer on a semiconductor substrate;
an insulation layer on the test memory device; and
a charge injection electrode on the insulation layer to inject a charge into the test memory device based on a voltage applied to the charge injection electrode.
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