US 12,467,856 B2
Gas analysis device and gas analysis method
Yuhei Sakaguchi, Kyoto (JP); Masakazu Minami, Kyoto (JP); Kyoji Shibuya, Kyoto (JP); and Motonobu Takahashi, Kyoto (JP)
Assigned to HORIBA STEC, CO., LTD., Kyoto (JP); and HORIBA, LTD., Kyoto (JP)
Appl. No. 18/039,316
Filed by HORIBA STEC, Co., Ltd., Kyoto (JP); and HORIBA, LTD., Kyoto (JP)
PCT Filed Nov. 22, 2021, PCT No. PCT/JP2021/042823
§ 371(c)(1), (2) Date May 30, 2023,
PCT Pub. No. WO2022/118694, PCT Pub. Date Jun. 9, 2022.
Claims priority of application No. 2020-199826 (JP), filed on Dec. 1, 2020.
Prior Publication US 2023/0417660 A1, Dec. 28, 2023
Int. Cl. G01N 21/3504 (2014.01); G01N 21/03 (2006.01); G01N 21/39 (2006.01)
CPC G01N 21/3504 (2013.01) [G01N 21/0332 (2013.01); G01N 21/39 (2013.01); G01N 2201/127 (2013.01)] 11 Claims
OG exemplary drawing
 
1. A gas analysis device for analyzing a concentration or partial pressure of a halide contained in a material gas used in a semiconductor manufacturing process or a by-product gas generated in a semiconductor manufacturing process, the gas analysis device comprising:
a gas cell into which the material gas or the by-product gas is introduced;
a laser light source that irradiates the gas cell with laser light whose wavelength is modulated;
a light detector that detects the laser light transmitted through the gas cell;
a heating mechanism that heats the gas cell; and
a signal processing unit that calculates the concentration or partial pressure of the halide by using a light absorption signal of the halide obtained from an output signal of the light detector,
wherein
the gas cell is provided with a pair of reflection mirrors inside to multiply reflect the laser light,
the gas cell is decompressed to 10 Torr or less, and
the laser light source modulates the wavelength of the laser light in a predetermined wavelength modulation range, and,
wherein the predetermined wavelength modulation range includes a feature part including a peak and a rising part or a falling part of the light absorption signal of the halide, but does not include a feature part including a peak and a rising portion or a falling portion of a light absorption signal of an interference component, and
wherein the halide is SiF4 or CF4.