US 12,467,689 B2
Furnace opening structure, substrate processing apparatus and method of manufacturing semiconductor device
Shinya Morita, Toyama (JP); Seiyo Nakashima, Toyama (JP); Yoshitaka Abe, Toyama (JP); Kazuhiro Harada, Toyama (JP); Yasunobu Koshi, Toyama (JP); and Shingo Nohara, Toyama (JP)
Assigned to KOKUSAI ELECTRIC CORPORATION, Tokyo (JP)
Filed by Kokusai Electric Corporation, Tokyo (JP)
Filed on Aug. 10, 2022, as Appl. No. 17/885,076.
Claims priority of application No. 2021-153668 (JP), filed on Sep. 21, 2021.
Prior Publication US 2023/0089509 A1, Mar. 23, 2023
Int. Cl. F27B 17/00 (2006.01); H01L 21/67 (2006.01)
CPC F27B 17/0025 (2013.01) [H01L 21/67098 (2013.01); H01L 21/67248 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A furnace opening structure comprising:
an upper inlet structure connected to a first protrusion provided at a lower portion of a reaction tube via a first seal, and configured to support the reaction tube;
a lower inlet structure connected to the upper inlet structure via a second seal; and
a fixing structure connected to the upper inlet structure and configured to fix the first protrusion,
wherein the upper inlet structure is provided below an exhaust pipe provided at the lower portion of the reaction tube, and
wherein the first protrusion is configured to be capable of being cooled by circulating a cooling medium through flow paths provided inside the upper inlet structure and the fixing structure, respectively.