US 12,467,159 B2
P-type SiC epitaxial wafer and production method therefor
Naoto Ishibashi, Chichibu (JP); Keisuke Fukada, Chichibu (JP); and Akira Bandoh, Chichibu (JP)
Assigned to Resonac Corporation, Tokyo (JP)
Appl. No. 16/471,784
Filed by SHOWA DENKO K.K., Tokyo (JP)
PCT Filed Dec. 11, 2017, PCT No. PCT/JP2017/044335
§ 371(c)(1), (2) Date Jun. 20, 2019,
PCT Pub. No. WO2018/123534, PCT Pub. Date Jul. 5, 2018.
Claims priority of application No. 2016-255541 (JP), filed on Dec. 28, 2016.
Prior Publication US 2019/0316273 A1, Oct. 17, 2019
Int. Cl. C30B 29/36 (2006.01); C30B 25/02 (2006.01); H10D 62/832 (2025.01); H01L 21/02 (2006.01)
CPC C30B 29/36 (2013.01) [C30B 25/02 (2013.01); H01L 21/02529 (2013.01); H10D 62/8325 (2025.01)] 19 Claims
OG exemplary drawing
 
1. A p-type SiC epitaxial wafer comprising a p-type SiC epitaxial film, wherein the p-type SiC epitaxial film has an Al dopant concentration of at least 1×1018 cm−3, and an in-plane uniformity of the dopant concentration of 25% or less,
the wafer has a diameter of at least six inches, and
the wafer has a triangular defect density of 0.1 cm−2 or less.