	US 12,467,147 B2
	Vapor cleaning of substrate surfaces
David Mui, Fremont, CA (US); Gerome Michel Dominique Melaet, San Leandro, CA (US); Nathan Musselwhite, San Jose, CA (US); Michael Ravkin, Los Altos, CA (US); Mark Kawaguchi, San Carlos, CA (US); and Ilia Kalinovski, Berkeley, CA (US)
Assigned to LAM RESEARCH CORPORATION, Fremont, CA (US)
Appl. No. 17/621,283
Filed by LAM RESEARCH CORPORATION, Fremont, CA (US)
PCT Filed Jun. 23, 2020, PCT No. PCT/US2020/039039 § 371(c)(1), (2) Date Dec. 21, 2021, PCT Pub. No. WO2020/263766, PCT Pub. Date Dec. 30, 2020.
Claims priority of provisional application 62/865,647, filed on Jun. 24, 2019.
Prior Publication US 2022/0356585 A1, Nov. 10, 2022
Int. Cl. B08B 5/00 (2006.01); C23F 1/08 (2006.01); C23F 1/12 (2006.01); H01L 21/02 (2006.01); H01L 21/67 (2006.01)

CPC C23F 1/12 (2013.01) [C23F 1/08 (2013.01)]

12 Claims

1. A method for cleaning a substrate, comprising:

arranging the substrate in a processing chamber to clean the substrate using a cleaning process selective to silicon-based material without leaving residue and without collapsing high aspect ratio features on the substrate; and

performing the cleaning process by:

controlling a pressure of the processing chamber to a predetermined pressure range;

controlling a temperature of the processing chamber to a predetermined temperature range;

supplying a vapor mixture including a metal chelating vapor for a first period to remove metal contamination from surfaces of the substrate;

after the first period, removing reactants from the processing chamber;

supplying an oxidizing gas mixture to the processing chamber for a second period; and

removing reactants from the processing chamber after the second period.