| CPC C23C 16/045 (2013.01) [C23C 16/12 (2013.01)] | 20 Claims |
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1. A method for depositing a film layer on a substrate, comprising:
flowing an inert gas up and around a periphery of the substrate, wherein the inert gas has a flow rate of approximately 10 sccm to approximately 3000 sccm, wherein a surface of the substrate has a plurality of structures with sidewalls, and wherein the substrate has an edge region containing edge structures near the periphery of the substrate;
forming a plasma in a physical vapor deposition (PVD) process to ionize the inert gas that is flowing during deposition to form an ion flux to induce sputtering of a metal material to form metal atoms for deposition on the substrate, wherein the metal material has an ionization percentage of approximately three percent or less;
generating an AC bias on the substrate to increase ion flux density at the edge region of the substrate to alter metal atom trajectories striking the edge region to increase sidewall coverage symmetry of outward sidewalls of the edge structures, wherein the AC bias is approximately 100 watts to approximately 3000 watts; and
heating the substrate to increase mobility of the metal atoms deposited on the edge structures and to increase deposition coverage, wherein a temperature of the substrate is approximately 150 degrees Celsius to approximately 500 degrees Celsius.
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