| CPC C23C 14/5873 (2013.01) [C23C 14/028 (2013.01); C23C 14/14 (2013.01); C23C 14/30 (2013.01); C23C 16/345 (2013.01); C23C 16/513 (2013.01); C23C 16/56 (2013.01); C23C 28/32 (2013.01); C23C 28/34 (2013.01)] | 20 Claims |

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1. A method comprising:
forming a first layer of a first material on a first portion of a substrate;
forming a second layer of a second material on the first layer and a second portion of the substrate;
forming a third layer of a third material on a first portion of the second layer, wherein a pattern based on a two-dimensional pinwheel-shaped pattern is formed into the third layer when forming the third layer; and
transforming at least a portion of the third layer into a three-dimensional structure based in part on removing a second portion of the second layer and at least a portion of the first layer.
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16. A method comprising:
forming a first material layer on a first portion of a substrate, the first material layer including aluminum;
forming a second material layer on the first material layer and a second portion of the substrate, the second material layer including silicon nitride;
forming a third material layer on a first portion of the second material layer, the third material layer including gold, wherein a pinwheel-shaped pattern is formed into the third material layer when forming the third material layer; and
transforming at least a portion of the third material layer into a three-dimensional structure by removing a second portion of the second material layer and at least a portion of the first material layer thereby causing a plurality of third portions of the second material layer to deform and guide the third material layer into the three-dimensional structure.
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