US 12,466,996 B2
μLED chip architecture based on nanostructured perovskite converter materials
Marcus Boehm, Thalmassing (DE); Britta Goeoetz, Regensburg (DE); and Martin Strassburg, Donaustauf (DE)
Assigned to OSRAM OLED GmbH, Regensburg (DE)
Appl. No. 17/262,106
Filed by OSRAM OLED GmbH, Regensburg (DE)
PCT Filed Jul. 24, 2019, PCT No. PCT/EP2019/069874
§ 371(c)(1), (2) Date Jan. 21, 2021,
PCT Pub. No. WO2020/020925, PCT Pub. Date Jan. 30, 2020.
Claims priority of application No. 102018117992.8 (DE), filed on Jul. 25, 2018; and application No. 102018125646.9 (DE), filed on Oct. 16, 2018.
Prior Publication US 2021/0261860 A1, Aug. 26, 2021
Int. Cl. C09K 11/66 (2006.01); B82Y 20/00 (2011.01); B82Y 40/00 (2011.01); C09K 11/02 (2006.01); H01L 33/50 (2010.01); H10H 20/851 (2025.01); H10H 20/01 (2025.01)
CPC C09K 11/665 (2013.01) [C09K 11/02 (2013.01); H10H 20/8512 (2025.01); B82Y 20/00 (2013.01); B82Y 40/00 (2013.01); H10H 20/0361 (2025.01)] 13 Claims
OG exemplary drawing
 
1. A method for producing an optoelectronic semiconductor component, the method comprising:
providing an optoelectronic semiconductor chip comprising at least one light-emitting layer and at least one cavity, wherein the at least one cavity is defined by a base surface extending laterally over a part of a light emission surface of the light emitting layer, and wherein the at least one cavity comprises the light emitting layer as a base; and
introducing at least one precursor of a conversion element in the at least one cavity,
wherein at least one conversion element comprises a perovskite-based ABX3 or A2BB′X6 structure,
wherein, in the perovskite-based ABX3 or A2BB′X6 structure, A is at least one cation selected from the group consisting of methylammonium, formamidinium, K+, Rb+ and Cs+, wherein X is selected from the group consisting of F—, Cl—, Br— and I—, wherein, in case of the ABX3 structure, B is a cation selected from the group consisting of Pb2+, Sn2+ and Ge2+, wherein, in case of the A2BB′X6 structure, B is selected from the group consisting of Bi+ and Ag+, and wherein B′ is Bi+.