	US 12,466,979 B2
	CMP composition including anionic and cationic inhibitors
Hsin-Yen Wu, Kaohsiung (TW); Jin-Hao Jhang, Taichung (TW); and Cheng-Yuan Ko, Kaohsiung (TW)
Assigned to CMC Materials LLC, Aurora, IL (US)
Filed by CMC Materials LLC, Aurora, IL (US)
Filed on Jul. 2, 2024, as Appl. No. 18/762,402.
Application 18/762,402 is a division of application No. 17/384,940, filed on Jul. 26, 2021, granted, now 12,234,382.
Claims priority of provisional application 63/077,036, filed on Sep. 11, 2020.
Claims priority of provisional application 63/057,639, filed on Jul. 28, 2020.
Prior Publication US 2024/0352280 A1, Oct. 24, 2024
Int. Cl. C09G 1/02 (2006.01); C09K 3/14 (2006.01); C09K 13/00 (2006.01); H01L 21/321 (2006.01); H01L 21/768 (2006.01)

CPC C09G 1/02 (2013.01) [C09K 3/1409 (2013.01); C09K 13/00 (2013.01); H01L 21/3212 (2013.01); H01L 21/7684 (2013.01)]

4 Claims

1. A method of chemical mechanical polishing a substrate having a tungsten layer or a molybdenum layer, the method comprising:

(a) contacting the substrate with a polishing composition comprising:

(i) a water based liquid carrier;

(ii) abrasive particles dispersed in the liquid carrier;

(iii) an amino acid selected from the group consisting of arginine, histidine, cysteine, lysine, and mixtures thereof; and

(iv) an anionic polymer or an anionic surfactant, wherein the polishing composition further comprises an amino acid surfactant;

(b) moving the polishing composition relative to the substrate; and

(c) abrading the substrate to remove a portion of the tungsten layer or the molybdenum layer from the substrate and thereby polish the substrate.