US 12,466,936 B2
Resin composition for semiconductor package, resin coated copper, and circuit board comprising same
Yong Suk Kim, Seoul (KR); and Jeong Han Kim, Seoul (KR)
Assigned to LG INNOTEK CO., LTD., Seoul (KR)
Appl. No. 18/265,393
Filed by LG INNOTEK CO., LTD., Seoul (KR)
PCT Filed Dec. 3, 2021, PCT No. PCT/KR2021/018247
§ 371(c)(1), (2) Date Jun. 5, 2023,
PCT Pub. No. WO2022/119389, PCT Pub. Date Jun. 9, 2022.
Claims priority of application No. 10-2020-0167759 (KR), filed on Dec. 3, 2020; and application No. 10-2020-0179352 (KR), filed on Dec. 21, 2020.
Prior Publication US 2024/0059863 A1, Feb. 22, 2024
Int. Cl. C08K 3/36 (2006.01); C08J 5/24 (2006.01); C08K 3/22 (2006.01); H05K 1/03 (2006.01)
CPC C08K 3/36 (2013.01) [C08J 5/24 (2013.01); C08K 3/22 (2013.01); H05K 1/0373 (2013.01); C08J 2327/18 (2013.01); C08J 2361/06 (2013.01); C08J 2363/00 (2013.01); C08K 2003/2227 (2013.01); C08K 2003/2241 (2013.01); C08K 2003/2244 (2013.01); C08K 2201/003 (2013.01); H05K 2201/0263 (2013.01)] 17 Claims
OG exemplary drawing
 
1. A resin composition for a semiconductor package, comprising:
an insulating layer comprising a resin composition that is a composite of a resin and a filler disposed in the resin,
wherein the filler has a content in a range of 68 wt % to 76 wt % in the resin composition,
wherein the filler includes first to third filler groups having different diameters,
wherein a diameter of the second filler group is smaller than a diameter of the first filler group and greater than a diameter of the third filler group,
wherein a content of the second filler group is greater than a content of each of the first and third filler groups,
wherein the diameter of the first filler group satisfies a range of 2 μm to 3.5 μm,
wherein the diameter of the second filler group satisfies a range of 1 μm to 2 μm,
wherein the diameter of the third filler group satisfies a range of 0.5 μm to 1 μm, and
wherein the insulating layer has a dielectric constant of 2.9 to 3.2 Dk.