US 12,466,772 B2
Batch sintering method for high-property silicon nitride ceramic substrate
Hui Zhang, Shanghai (CN); Xuejian Liu, Shanghai (CN); Jindi Jiang, Shanghai (CN); Xiumin Yao, Shanghai (CN); Zhengren Huang, Shanghai (CN); Zhongming Chen, Shanghai (CN); and Jian Huang, Shanghai (CN)
Assigned to SHANGHAI INSTITUTE OF CERAMICS, CHINESE ACADEMY OF SCIENCES, Shanghai (CN)
Appl. No. 18/261,180
Filed by SHANGHAI INSTITUTE OF CERAMICS, CHINESE ACADEMY OF SCIENCES, Shanghai (CN)
PCT Filed Jan. 17, 2022, PCT No. PCT/CN2022/072351
§ 371(c)(1), (2) Date Jul. 12, 2023,
PCT Pub. No. WO2022/156635, PCT Pub. Date Jul. 28, 2022.
Claims priority of application No. 202110075093.4 (CN), filed on Jan. 20, 2021.
Prior Publication US 2024/0067576 A1, Feb. 29, 2024
Int. Cl. C04B 35/584 (2006.01); C04B 35/638 (2006.01); C04B 35/64 (2006.01); C04B 37/00 (2006.01)
CPC C04B 37/003 (2013.01) [C04B 35/584 (2013.01); C04B 35/638 (2013.01); C04B 35/64 (2013.01); C04B 2235/428 (2013.01); C04B 2235/6025 (2013.01); C04B 2235/6567 (2013.01); C04B 2235/6581 (2013.01); C04B 2235/6582 (2013.01); C04B 2237/08 (2013.01); C04B 2237/368 (2013.01)] 14 Claims
OG exemplary drawing
 
1. A batch sintering method for making a high-property silicon nitride ceramic substrate, comprising the following steps:
(1) stacking silicon nitride ceramic substrate green bodies, putting the silicon nitride ceramic substrate green bodies into a boron nitride crucible, and applying a layer of boron nitride powder between adjacent silicon nitride ceramic substrate green bodies;
(2) performing step-by-step vacuumization, and then debinding in a nitrogen atmosphere or a reducing atmosphere at 500° C. to 900° C.; wherein the step-by-step vacuumization is performed in at least two steps or at least three steps; if vacuumization is performed in the at least two steps, parameters of the step-by-step vacuumization include: a first step of 20 to 30 minutes of vacuumization for making a vacuum degree reach 20 kPa to 30 kPa, and a second of 10 to 20 minutes of vacuumization for making a vacuum degree less than 10 Pa; or if vacuumization is performed in the at least three steps, parameters of the step-by-step vacuumization include: a first step of 10 to 15 minutes of vacuumization for making a vacuum degree reach 60 kPa to 80 kPa, a second step of 10 to 15 minutes of vacuumization for making a vacuum degree reach 10 kPa to 30 kPa, and a third step of 10 to 15 minutes of vacuumization for making a vacuum degree less than 10 Pa; and then
(3) performing gas pressure sintering in a nitrogen atmosphere at 1800° C. to 2000° C., thereby completing a batch preparation of the high-property silicon nitride ceramic substrate.