US 12,137,622 B2
Forming-free random-access memory (RRAM) devices
Minxian Zhang, Amherst, MA (US); Mingche Wu, San Jose, CA (US); and Ning Ge, Danville, CA (US)
Assigned to TetraMem Inc., Fremont, CA (US)
Filed by TetraMem Inc., Fremont, CA (US)
Filed on Jul. 15, 2022, as Appl. No. 17/812,866.
Prior Publication US 2024/0023466 A1, Jan. 18, 2024
Int. Cl. H10N 70/00 (2023.01); G11C 13/00 (2006.01); H10N 70/20 (2023.01)
CPC H10N 70/841 (2023.02) [G11C 13/0007 (2013.01); G11C 13/004 (2013.01); G11C 13/0069 (2013.01); H10N 70/041 (2023.02); H10N 70/24 (2023.02); H10N 70/826 (2023.02); H10N 70/8833 (2023.02)] 13 Claims
OG exemplary drawing
 
1. A method for fabricating a forming-free resistive random-access memory (RRAM) device, comprising:
fabricating an RRAM cell, comprising:
fabricating, on a bottom electrode, a switching oxide layer comprising at least one transition metal oxide;
fabricating, on the switching oxide layer, an interface layer comprising a material that is more chemically stable than the at least one transition metal oxide; and
fabricating a top electrode on the interface layer; and
annealing the RRAM cell.