CPC H10N 70/823 (2023.02) [G11C 13/0007 (2013.01); G11C 13/0011 (2013.01); H10B 63/30 (2023.02); H10N 70/021 (2023.02); H10N 70/841 (2023.02); H10N 70/883 (2023.02)] | 20 Claims |
1. An integrated chip, comprising:
a bottom electrode disposed over a monocrystalline silicon or silicon-on-insulator substrate;
an intercalated metal and dielectric stack over the bottom electrode;
a chalcogenide layer over the intercalated metal and dielectric stack; and
a top electrode over the chalcogenide layer.
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