US 12,137,620 B2
Storage device
Kunifumi Suzuki, Yokkaichi Mie (JP); and Yuuichi Kamimuta, Yokkaichi Mie (JP)
Assigned to Kioxia Corporation, Tokyo (JP)
Filed by Kioxia Corporation, Tokyo (JP)
Filed on Dec. 13, 2021, as Appl. No. 17/549,236.
Claims priority of application No. 2021-097861 (JP), filed on Jun. 11, 2021.
Prior Publication US 2022/0399489 A1, Dec. 15, 2022
Int. Cl. H01L 23/48 (2006.01); H10B 63/00 (2023.01); H10N 70/00 (2023.01); H10N 70/20 (2023.01)
CPC H10N 70/235 (2023.02) [H01L 23/481 (2013.01); H10B 63/84 (2023.02); H10N 70/8828 (2023.02)] 19 Claims
OG exemplary drawing
 
1. A storage device comprising:
a first wiring layer;
a second wiring layer;
a resistance change layer containing tellurium and disposed between the first wiring layer and the second wiring layer; and
an adjacent layer containing at least one of a group consisting of germanium, silicon, carbon, tin, aluminum, gallium, and indium and disposed between the second wiring layer and the resistance change layer and adjacent to the resistance change layer in a first direction, wherein
the resistance change layer is capable of changing between a first state and a second state different from each other in electric resistance,
the resistance change layer is in a crystal state in any of the first state and the second state, and
a length of the adjacent layer in a second direction orthogonal to the first direction is shorter than a length of the resistance change layer in the second direction.