US 12,137,617 B2
Memory cell with magnetic access selector apparatus
Mauricio Manfrini, Zhubei (TW)
Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu (TW)
Filed on Jun. 16, 2022, as Appl. No. 17/842,064.
Application 17/842,064 is a division of application No. 16/824,862, filed on Mar. 20, 2020, granted, now 11,380,840.
Prior Publication US 2022/0310906 A1, Sep. 29, 2022
Int. Cl. H10N 50/10 (2023.01); H10B 61/00 (2023.01); H10N 50/80 (2023.01)
CPC H10N 50/10 (2023.02) [H10B 61/00 (2023.02); H10N 50/80 (2023.02)] 20 Claims
OG exemplary drawing
 
1. A method of forming an integrated chip, the method comprising:
forming a magnetic tunnel junction (MTJ) device over a semiconductor substrate, the MTJ device having an MTJ disposed between a first electrode and a second electrode, wherein the MTJ comprises a pinned layer, a free layer, and a tunnel barrier layer; and
forming a metal-insulator-metal (MIM) bipolar selector for the MTJ device by a process that includes forming a first metal layer, a non-magnetic layer, and a second metal layer, wherein the non-magnetic layer is between the first metal layer and the second metal layer, and one of the first metal layer and the second metal layer is a ferromagnetic material layer; and
providing the ferromagnetic material layer with fixed polarization;
wherein the ferromagnetic material layer has a magnetic field that extends through the free layer.