US 12,137,616 B2
Magnetoresistive stack/structure and methods therefor
Jijun Sun, Chandler, AZ (US)
Assigned to Everspin Technologies, Inc., Chandler, AZ (US)
Filed by Everspin Technologies, Inc., Chandler, AZ (US)
Filed on Nov. 14, 2018, as Appl. No. 16/190,299.
Claims priority of provisional application 62/648,743, filed on Mar. 27, 2018.
Claims priority of provisional application 62/588,158, filed on Nov. 17, 2017.
Prior Publication US 2019/0157549 A1, May 23, 2019
Int. Cl. H01L 43/02 (2006.01); G11C 11/16 (2006.01); H01F 41/30 (2006.01); H10B 61/00 (2023.01); H10N 50/01 (2023.01); H10N 50/10 (2023.01); H10N 50/80 (2023.01); H10N 50/85 (2023.01)
CPC H10N 50/01 (2023.02) [G11C 11/16 (2013.01); H01F 41/303 (2013.01); H10B 61/22 (2023.02); H10N 50/10 (2023.02); H10N 50/80 (2023.02); H10N 50/85 (2023.02)] 20 Claims
OG exemplary drawing
 
1. A method of fabricating a magnetoresistive device, comprising:
forming an intermediate region;
forming a magnetically free region on one side of the intermediate region; and
forming a magnetically fixed region on an opposite side of the intermediate region, wherein forming the magnetically fixed region includes:
forming a first ferromagnetic region;
forming an antiferromagnetic coupling region on one side of the first ferromagnetic region;
upon forming the antiferromagnetic coupling region, treating a surface of the antiferromagnetic coupling region by:
exposing the surface to a mixture of about 2-80% oxygen in other gases; and
providing a dusting of palladium on the surface exposed to the mixture; and
forming a second ferromagnetic region on the treated surface of the antiferromagnetic coupling region,
wherein treating the surface of the antiferromagnetic coupling region includes exposing the surface to the mixture in a vacuum chamber at a pressure less than or equal to 0.05 millitorr, and wherein the method further comprises removing water vapor from the vacuum chamber prior to the step of treating the surface of the antiferromagnetic coupling region.