US 12,137,559 B2
Semiconductor memory device
Takuya Inatsuka, Yokkaichi (JP); Tadashi Iguchi, Yokkaichi (JP); Murato Kawai, Yokkaichi (JP); Hisashi Kato, Yokkaichi (JP); and Megumi Ishiduki, Yokkaichi (JP)
Assigned to KIOXIA CORPORATION, Tokyo (JP)
Filed by KIOXIA CORPORATION, Tokyo (JP)
Filed on Mar. 14, 2023, as Appl. No. 18/183,499.
Application 18/183,499 is a continuation of application No. 17/405,700, filed on Aug. 18, 2021, granted, now 11,637,116.
Application 17/405,700 is a continuation of application No. 16/731,208, filed on Dec. 31, 2019, granted, now 11,127,750, issued on Sep. 21, 2021.
Application 16/731,208 is a continuation of application No. 15/903,448, filed on Feb. 23, 2018, granted, now 10,553,600, issued on Feb. 4, 2020.
Application 15/903,448 is a continuation of application No. 15/462,118, filed on Mar. 17, 2017, granted, now 9,935,118, issued on Apr. 3, 2018.
Claims priority of provisional application 62/393,835, filed on Sep. 13, 2016.
Prior Publication US 2023/0225123 A1, Jul. 13, 2023
Int. Cl. H01L 29/76 (2006.01); H10B 41/10 (2023.01); H10B 41/27 (2023.01); H10B 41/35 (2023.01); H10B 41/50 (2023.01); H10B 43/10 (2023.01); H10B 43/27 (2023.01); H10B 43/35 (2023.01); H10B 43/50 (2023.01)
CPC H10B 43/10 (2023.02) [H10B 41/10 (2023.02); H10B 41/27 (2023.02); H10B 41/35 (2023.02); H10B 41/50 (2023.02); H10B 43/27 (2023.02); H10B 43/35 (2023.02); H10B 43/50 (2023.02)] 7 Claims
OG exemplary drawing
 
1. A semiconductor memory device comprising:
a memory string extending in a first direction perpendicular to a substrate, the memory string having a first select transistor and memory cell transistors connected in series;
electrodes stacked in the first direction and extending in a second direction, the electrodes having a first select electrode connected to the first select transistor and control electrodes connected to the memory cell transistors;
a first separation portion extending in the first direction and the second direction, the first select electrode and the control electrodes being separated by the first separation portion; and
a second separation portion extending in the first direction and the second direction, the first select electrode being separated by the second separation portion in a third direction crossing the first direction and the second direction, a part of the control electrodes being separated by the second separation portion in the third direction.