US 12,137,558 B2
Staircase structure for memory device
Zhenyu Lu, Hubei (CN); Jun Chen, Hubei (CN); Xiaowang Dai, Hubei (CN); Jifeng Zhu, Hubei (CN); Qian Tao, Hubei (CN); Yu Ru Huang, Hubei (CN); Si Ping Hu, Hubei (CN); Lan Yao, Hubei (CN); Li Hong Xiao, Hubei (CN); A Man Zheng, Hubei (CN); Kun Bao, Hubei (CN); and Haohao Yang, Hubei (CN)
Assigned to Yangtze Memory Technologies Co., Ltd., Wuhan (CN)
Filed by Yangtze Memory Technologies Co., Ltd., Hubei (CN)
Filed on Nov. 10, 2022, as Appl. No. 18/054,468.
Application 18/054,468 is a continuation of application No. 17/447,456, filed on Sep. 13, 2021.
Application 17/447,456 is a continuation of application No. 16/885,858, filed on May 28, 2020, granted, now 11,145,666.
Application 16/885,858 is a continuation of application No. 16/126,956, filed on Sep. 10, 2018, granted, now 10,680,003, issued on Jun. 9, 2020.
Application 16/126,956 is a continuation of application No. PCT/CN2018/098962, filed on Aug. 6, 2018.
Claims priority of application No. 201710750398.4 (CN), filed on Aug. 28, 2017.
Prior Publication US 2023/0083030 A1, Mar. 16, 2023
Int. Cl. H10B 41/35 (2023.01); H01L 21/027 (2006.01); H01L 21/311 (2006.01); H01L 21/768 (2006.01); H01L 23/528 (2006.01); H01L 23/532 (2006.01); H01L 23/535 (2006.01); H10B 41/41 (2023.01); H10B 43/27 (2023.01); H10B 43/35 (2023.01); H10B 43/50 (2023.01)
CPC H10B 41/35 (2023.02) [H01L 21/0273 (2013.01); H01L 21/31144 (2013.01); H01L 21/76805 (2013.01); H01L 21/76816 (2013.01); H01L 21/76895 (2013.01); H01L 23/5283 (2013.01); H01L 23/53209 (2013.01); H01L 23/53242 (2013.01); H01L 23/53257 (2013.01); H01L 23/535 (2013.01); H10B 41/41 (2023.02); H10B 43/27 (2023.02); H10B 43/35 (2023.02); H10B 43/50 (2023.02)] 20 Claims
OG exemplary drawing
 
1. A semiconductor structure, comprising:
a first material layer and a second material layer, wherein the first material layer is disposed over a first portion of the second material layer;
a first landing pad disposed over a second portion of the second material layer, wherein the first landing pad comprises a first side surface and a second side surface, and wherein the first side surface is in contact with the first material layer and the second side surface is laterally displaced from a side surface of the second portion of the second material layer;
another first material layer and another second material layer, wherein the another first material layer is disposed over a first portion of the another second material layer, and wherein the second material layer is disposed over the another first material layer; and
a second landing pad disposed over a second portion of the another second material layer, wherein the second landing pad comprises a third side surface and a fourth side surface, wherein the third side surface is in contact with the another first material layer and the fourth side surface is laterally displaced from a side surface of the second portion of the another second material layer, and wherein the second side surface of the first landing pad is laterally displaced from the third side surface of the second landing pad.