US 12,137,554 B2
Three-dimensional memory device with word-line etch stop liners and method of making thereof
Adarsh Rajashekhar, Santa Clara, CA (US); Raghuveer S. Makala, Campbell, CA (US); and Fei Zhou, San Jose, CA (US)
Assigned to SANDISK TECHNOLOGIES LLC, Addison, TX (US)
Filed by SANDISK TECHNOLOGIES LLC, Addison, TX (US)
Filed on Nov. 12, 2021, as Appl. No. 17/525,233.
Prior Publication US 2023/0157013 A1, May 18, 2023
Int. Cl. H10B 41/27 (2023.01); H01L 21/768 (2006.01); H10B 43/27 (2023.01)
CPC H10B 41/27 (2023.02) [H01L 21/76802 (2013.01); H01L 21/76829 (2013.01); H10B 43/27 (2023.02)] 6 Claims
OG exemplary drawing
 
1. A three-dimensional memory device, comprising:
an alternating stack of insulating layers and electrically conductive layers located over a substrate, wherein the alternating stack comprises a staircase region in which lateral extents of the electrically conductive layers decrease with a vertical distance from the substrate;
memory stack structures vertically extending through the alternating stack, wherein each of the memory stack structures comprises a vertical semiconductor channel and a vertical stack of memory elements;
etch stop plates located in the staircase region, and overlying an end portion of a respective one of the electrically conductive layers, wherein the etch stop plates comprise tungsten carbonitride; and
contact via structures located in the staircase region, vertically extending through a respective one of the etch stop plates, and contacting the respective one of the electrically conductive layers.