US 12,137,551 B2
Integrated assemblies having body contact regions proximate transistor body regions; and methods utilizing bowl etches during fabrication of integrated assemblies
Werner Juengling, Meridian, ID (US)
Assigned to Micron Technology, Inc., Boise, ID (US)
Filed by Micron Technology, Inc., Boise, ID (US)
Filed on Sep. 22, 2022, as Appl. No. 17/950,336.
Application 17/950,336 is a division of application No. 16/995,562, filed on Aug. 17, 2020, granted, now 11,476,256.
Application 16/995,562 is a division of application No. 16/213,172, filed on Dec. 7, 2018, granted, now 10,784,264, issued on Sep. 22, 2020.
Prior Publication US 2023/0013666 A1, Jan. 19, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. H10B 12/00 (2023.01); H01L 21/308 (2006.01); H01L 21/762 (2006.01)
CPC H10B 12/48 (2023.02) [H01L 21/308 (2013.01); H01L 21/76232 (2013.01); H10B 12/31 (2023.02)] 38 Claims
OG exemplary drawing
 
33. An integrated assembly, comprising:
a semiconductor-containing structure comprising:
a channel region between first and second source/drain regions;
an extension portion of semiconductor material of the semiconductor-containing structure extending from the channel region, the extension portion being laterally spaced from, and extending along, one of the first and second source/drain regions;
an insulative material adjacent the channel region;
a conductive gate adjacent the insulative material; and
wherein the extension portion and the one of the first and second source/drain regions comprise two legs of the semiconductor material of the semiconductor-containing structure extending downward from a bottom of the channel region.