US 12,137,549 B2
Microelectronic devices comprising capacitor structures, and related electronic systems and methods
Fatma Arzum Simsek-Ege, Boise, ID (US); and Yuan He, Boise, ID (US)
Assigned to Micron Technology, Inc., Boise, ID (US)
Filed by Micron Technology, Inc., Boise, ID (US)
Filed on Aug. 30, 2021, as Appl. No. 17/461,095.
Prior Publication US 2023/0067220 A1, Mar. 2, 2023
Int. Cl. H10B 12/00 (2023.01); G11C 5/02 (2006.01); G11C 5/10 (2006.01); G11C 11/407 (2006.01)
CPC H10B 12/30 (2023.02) [G11C 5/025 (2013.01); G11C 5/10 (2013.01); G11C 11/407 (2013.01); H10B 12/03 (2023.02)] 32 Claims
OG exemplary drawing
 
1. A microelectronic device, comprising:
array regions individually comprising:
memory cells comprising access devices and storage node devices;
digit lines coupled to the access devices and extending in a first direction;
word lines coupled to the access devices and extending in a second direction orthogonal to the first direction; and
control logic devices over and in electrical communication with the memory cells; and
capacitor regions horizontally offset from the array regions in the first direction and having a dimension in the second direction greater than each individual array region in the second direction, the capacitor regions individually comprising:
additional control logic devices vertically overlying the memory cells; and
capacitor structures within horizontal boundaries of the additional control logic devices.