	US 12,137,500 B2
	Light emitter devices, optical filter structures and methods for forming light emitter devices and optical filter structures
Thoralf Kautzsch, Dresden (DE); Heiko Froehlich, Radebeul (DE); Uwe Rudolph, Dresden (DE); Alessia Scire, Dresden (DE); Maik Stegemann, Pesterwitz (DE); and Mirko Vogt, Dresden (DE)
Assigned to Infineon Technologies AG, Neubiberg (DE)
Filed by Infineon Technologies AG, Neubiberg (DE)
Filed on Apr. 24, 2020, as Appl. No. 16/857,400.
Application 16/857,400 is a division of application No. 15/461,810, filed on Mar. 17, 2017, granted, now 10,681,777.
Application 15/461,810 is a continuation in part of application No. 15/089,027, filed on Apr. 1, 2016, granted, now 10,347,814, issued on Jul. 9, 2019.
Claims priority of application No. 102017102183.3 (DE), filed on Feb. 3, 2017.
Prior Publication US 2020/0253000 A1, Aug. 6, 2020
Int. Cl. H05B 3/00 (2006.01); G01F 1/68 (2006.01); G01N 29/02 (2006.01); G01N 29/24 (2006.01); H01L 33/44 (2010.01); H01L 33/52 (2010.01); H01L 33/60 (2010.01); H01L 33/64 (2010.01)

CPC H05B 3/0014 (2013.01) [G01N 29/02 (2013.01); G01N 29/2418 (2013.01); H01L 33/52 (2013.01); H01L 33/60 (2013.01); H01L 33/642 (2013.01); G01F 1/68 (2013.01); G01N 2291/021 (2013.01); G01N 2291/02809 (2013.01); H01L 33/44 (2013.01); H05B 2203/017 (2013.01)]

20 Claims

1. A system comprising:

an optical filter structure comprising:

a plurality of semiconductor layers of a filter layer stack; and

a plurality of cavity layers of the filter layer stack arranged alternatingly to the semiconductor layers of the plurality of semiconductor layers,

wherein a thickness of the semiconductor layers of the plurality of semiconductor layers is less than 2 μm and a thickness of the cavity layers of the plurality of cavity layers is less than 4 μm so that light passing the filter layer stack comprises a spectral maximum at a desired optical wavelength; and

a heater structure disposed within a cavity adjacent to the plurality of semiconductor layers of the filter layer stack.