CPC H04B 7/0814 (2013.01) [H03F 1/26 (2013.01); H03F 3/195 (2013.01); H03F 3/72 (2013.01); H03H 3/02 (2013.01); H04B 1/006 (2013.01); H03F 2200/294 (2013.01); H03F 2200/451 (2013.01); H03F 2203/7239 (2013.01); H03H 2003/023 (2013.01); H03H 2003/025 (2013.01); H03H 9/02118 (2013.01); H03H 9/173 (2013.01); H03H 9/175 (2013.01)] | 20 Claims |
1. A front end module (FEM) device, the device comprising:
a power amplifier (PA) electrically coupled to an input node;
resonator electrically coupled to the PA;
wherein the resonator comprises
a substrate;
a support layer overlying the substrate, the support layer having an air cavity;
a first electrode overlying the air cavity and a portion of the support layer;
a first passivation layer overlying the support layer and being physically coupled to the first electrode;
a piezoelectric film overlying the support layer, the first electrode, and the air cavity, the piezoelectric film having an electrode contact via;
a second electrode formed overlying the piezoelectric film; and
a top metal formed overlying the piezoelectric film, the top metal being physically coupled to the first electrode through the electrode contact via; and
a diversity switch electrically coupled the resonator, an output node, and an antenna.
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