CPC H04B 1/0483 (2013.01) [G01R 27/06 (2013.01); H01J 37/32183 (2013.01); H01J 37/32935 (2013.01); H01J 2237/3321 (2013.01)] | 20 Claims |
1. An apparatus for providing signals to stations of a process chamber configured to perform plasma-based semiconductor fabrication processes, comprising:
a plurality of signal generators configured to generate signals having first and second frequencies;
a measurement circuit configured to measure a voltage standing wave ratio (VSWR); and
a match reflection optimizer having a plurality of output ports each corresponding to a station of a plurality of stations of the process chamber, the match reflection optimizer comprising a reactive component configured to be adjusted responsive to an output signal from the measurement circuit.
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