| CPC H03K 5/084 (2013.01) [G05F 1/56 (2013.01); G05F 3/247 (2013.01)] | 5 Claims |
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1. A clamp circuit comprising:
a first MOS transistor;
a second MOS transistor connected in series with the first MOS transistor without another transistor connected in series between the first MOS transistor and the second MOS transistor; and
a current source connected between a terminal configured to receive an input voltage and the first MOS transistor, wherein
the first MOS transistor has a gate connected to a drain of the first MOS transistor,
the second MOS transistor has a gate connected to a drain of the second MOS transistor,
the first MOS transistor is an N-channel type MOS transistor,
the second MOS transistor is a P-channel type MOS transistor,
the first MOS transistor has a source connected to a source of the second MOS transistor,
the first MOS transistor has a backgate connected to the drain of the second MOS transistor,
the second MOS transistor has a backgate connected to a connection node between the drain of the first MOS transistor and the current source without passing through either the current source or a source to drain conduction path of the first MOS transistor,
both the first MOS transistor and the second MOS transistor cause a body effect,
the gate of the first MOS transistor and the drain of the first MOS transistor are connected together without another transistor connected between the gate of the first MOS transistor and the drain of the first MOS transistor.
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