	US 12,136,906 B2
	Piezoelectric acoustic resonator manufactured with piezoelectric thin film transfer process
Dae Ho Kim, Cornelius, NC (US); Mary Winters, Webster, NY (US); Ramakrishna Vetury, Charlotte, NC (US); and Jeffrey B. Shealy, Davidson, NC (US)
Assigned to Akoustis, Inc., Huntersville, NC (US)
Filed by Akoustis, Inc., Huntersville, NC (US)
Filed on May 22, 2023, as Appl. No. 18/321,529.
Application 18/321,529 is a division of application No. 16/822,689, filed on Mar. 18, 2020, granted, now 11,671,067.
Application 16/822,689 is a continuation of application No. 16/433,849, filed on Jun. 6, 2019, granted, now 11,070,184, issued on Jul. 20, 2021.
Application 16/433,849 is a continuation of application No. 15/784,919, filed on Oct. 16, 2017, granted, now 10,355,659, issued on Jul. 16, 2019.
Application 15/784,919 is a continuation in part of application No. 15/068,510, filed on Mar. 11, 2016, granted, now 10,217,930, issued on Feb. 26, 2019.
Prior Publication US 2023/0291376 A1, Sep. 14, 2023
Int. Cl. H03H 3/02 (2006.01); H03H 9/02 (2006.01); H03H 9/05 (2006.01); H03H 9/10 (2006.01); H03H 9/13 (2006.01); H03H 9/17 (2006.01); H03H 9/54 (2006.01); H10N 30/00 (2023.01); H10N 30/02 (2023.01); H10N 30/06 (2023.01); H10N 30/077 (2023.01); H10N 30/086 (2023.01); H10N 30/85 (2023.01); H10N 30/87 (2023.01); H10N 30/88 (2023.01); H10N 30/072 (2023.01)

CPC H03H 3/02 (2013.01) [H03H 9/02015 (2013.01); H03H 9/02118 (2013.01); H03H 9/0523 (2013.01); H03H 9/105 (2013.01); H03H 9/13 (2013.01); H03H 9/173 (2013.01); H03H 9/175 (2013.01); H03H 9/177 (2013.01); H03H 9/547 (2013.01); H10N 30/02 (2023.02); H10N 30/06 (2023.02); H10N 30/077 (2023.02); H10N 30/086 (2023.02); H10N 30/706 (2024.05); H10N 30/85 (2023.02); H10N 30/875 (2023.02); H10N 30/877 (2023.02); H10N 30/88 (2023.02); H03H 2003/021 (2013.01); H03H 2003/025 (2013.01); H10N 30/072 (2023.02); H10N 30/704 (2024.05); Y10T 29/42 (2015.01)]

10 Claims

1. An acoustic resonator device comprising: a bond substrate; a bonding support layer overlying the bond substrate; a support layer overlying the bonding support layer; a reflector structure overlying the support layer, wherein the reflector structure includes at least a pair of layers having a low acoustic impedance layer and a high acoustic impedance layer; a first electrode overlying the reflector structure and a portion of the support layer; a piezoelectric film overlying the support layer, the first electrode, and the reflector structure, the piezoelectric film having an electrode contact via; a second electrode formed overlying the piezoelectric film; a top metal formed overlying the piezoelectric film, the top metal being physically coupled to the first electrode through the electrode contact via; a first contact metal formed overlying a portion of the second electrode and the piezoelectric film; a second contact metal formed overlying a portion of the top metal and the piezoelectric film; and a passivation layer formed overlying the piezoelectric film, the second electrode, and the top metal.