US 12,136,799 B2
Surface emitting laser device and a light emitting device including the same
Myung Sub Kim, Seoul (KR); Ju Young Park, Seoul (KR); and Jun Hee Park, Seoul (KR)
Assigned to SUZHOU LEKIN SEMICONDUCTOR CO., LTD., Taicang (CN)
Appl. No. 17/283,200
Filed by SUZHOU LEKIN SEMICONDUCTOR CO., LTD., Taicang (CN)
PCT Filed Oct. 29, 2019, PCT No. PCT/KR2019/014329
§ 371(c)(1), (2) Date Apr. 6, 2021,
PCT Pub. No. WO2020/091365, PCT Pub. Date May 7, 2020.
Claims priority of application No. 10-2018-0131802 (KR), filed on Oct. 31, 2018.
Prior Publication US 2022/0416507 A1, Dec. 29, 2022
Int. Cl. H01S 5/183 (2006.01); H01S 5/32 (2006.01)
CPC H01S 5/18394 (2013.01) [H01S 5/18361 (2013.01); H01S 5/3211 (2013.01)] 16 Claims
OG exemplary drawing
 
1. A surface emitting laser device, comprising:
a first reflective layer;
an active layer on the first reflective layer;
an aperture region disposed on the active layer and including an aperture and an insulating region disposed around the aperture;
a second reflective layer on the aperture region;
a first electrode formed on the first reflective layer;
a second electrode including a pad electrode and a contact electrode; and
a passivation layer disposed on the second reflective layer,
wherein the second reflective layer includes a trench region, a core reflective layer vertically disposed at a position corresponding to the aperture and surrounded by the trench region, and an outer reflective layer disposed radially outside of the trench region,
wherein the passivation layer includes a cladding insulating layer disposed within the trench region and around the core reflective layer, an upper insulating layer disposed on a top surface of the core reflective layer and vertically overlapping with the aperture of the aperture region, and an outer insulating layer disposed on a sidewall of the outer reflective layer,
wherein a horizontal cross-section of the aperture and a horizontal cross-section of the core reflective layer are different from each other,
wherein a bottom surface of the trench is formed within the second reflective layer and is directly above the insulation region of the aperture region,
wherein a depth of the trench region is formed to a depth of 50% to 95% of a thickness of the second reflective layer, and
wherein the contact electrode of the second electrode is formed on a top surface of the outer reflective layer and is laterally between the cladding insulating layer and the outer insulating layer.