US 12,136,798 B2
Vertical cavity surface emitting device with a buried index guiding current confinement layer
Constance J. Chang-Hasnain, Palo Alto, CA (US); Jiaxing Wang, Albany, CA (US); Kevin T. Cook, Berkeley, CA (US); Jonas H. Kapraun, Albany, CA (US); and Emil Kolev, Pacifica, CA (US)
Assigned to THE REGENTS OF THE UNIVERSITY OF CALIFORNIA, Oakland, CA (US)
Filed by THE REGENTS OF THE UNIVERSITY OF CALIFORNIA, Oakland, CA (US)
Filed on Nov. 5, 2020, as Appl. No. 17/090,850.
Application 17/090,850 is a continuation of application No. PCT/US2019/031698, filed on May 10, 2019.
Claims priority of provisional application 62/670,078, filed on May 11, 2018.
Prior Publication US 2021/0159668 A1, May 27, 2021
Int. Cl. H01S 5/00 (2006.01); H01S 5/042 (2006.01); H01S 5/125 (2006.01); H01S 5/183 (2006.01); H01S 5/20 (2006.01); H01S 5/22 (2006.01); H01S 5/227 (2006.01); H01S 5/343 (2006.01)
CPC H01S 5/18308 (2013.01) [H01S 5/0424 (2013.01); H01S 5/04256 (2019.08); H01S 5/125 (2013.01); H01S 5/18377 (2013.01); H01S 5/18394 (2013.01); H01S 5/2081 (2013.01); H01S 5/209 (2013.01); H01S 5/2223 (2013.01); H01S 5/2275 (2013.01); H01S 5/3434 (2013.01)] 23 Claims
OG exemplary drawing
 
1. A vertical cavity surface emitting optoelectronic apparatus comprising:
(a) a top reflector and bottom reflector;
(b) a first contact layer above said bottom reflector and having a first type of doping;
(c) an active region located above said first contact layer and containing one or more quantum well layers;
(d) a second contact layer above said active region and having a second type of doping;
(e) a current blocking ring with a center aperture above said second contact layer and having a first type of doping;
(f) a third contact layer, located above and filling the center aperture of said current blocking ring, and having a second type of doping;
(g) wherein the refractive index of the material of the current blocking ring is lower than the refractive index of the material of the third contact layer;
(h) wherein said second contact layer and said third contact layer interface with each other inside the center aperture of the current blocking ring;
(i) wherein said third contact layer is injecting current into the second contact layer through the center aperture;
(j) wherein said second contact layer and said third contact layer as well as the current blocking ring are material which remains free of ion-implantation, is unoxidized, single crystalline, and contains in-situ doped epitaxial materials;
(k) wherein the material of the current blocking ring has been etched selectively over the material of the second contact layer; and
(l) wherein the third contact layer and subsequent layers provide for increasing planarization of the center aperture.