US 12,136,797 B2
Semiconductor optical device and optical transceiver module
Takafumi Taniguchi, Tokyo (JP); Shigenori Hayakawa, Kanagawa (JP); and Yasushi Sakuma, Tokyo (JP)
Assigned to Lumentum Operations LLC, San Jose, CA (US)
Filed by Lumentum Japan, Inc., Kanagawa (JP)
Filed on Sep. 17, 2021, as Appl. No. 17/447,941.
Application 17/447,941 is a continuation of application No. 16/419,043, filed on May 22, 2019, granted, now 11,133,646.
Claims priority of application No. 2018-145785 (JP), filed on Aug. 2, 2018.
Prior Publication US 2022/0006257 A1, Jan. 6, 2022
This patent is subject to a terminal disclaimer.
Int. Cl. H01S 5/026 (2006.01); H01S 5/12 (2021.01); H01S 5/22 (2006.01); H01S 5/223 (2006.01); H01S 5/227 (2006.01); H01S 5/00 (2006.01); H01S 5/02251 (2021.01); H01S 5/02253 (2021.01); H01S 5/02325 (2021.01); H01S 5/024 (2006.01); H01S 5/068 (2006.01); H01S 5/0683 (2006.01); H01S 5/343 (2006.01)
CPC H01S 5/0265 (2013.01) [H01S 5/2224 (2013.01); H01S 5/2235 (2013.01); H01S 5/0064 (2013.01); H01S 5/0085 (2013.01); H01S 5/02251 (2021.01); H01S 5/02253 (2021.01); H01S 5/02325 (2021.01); H01S 5/02415 (2013.01); H01S 5/06804 (2013.01); H01S 5/06832 (2013.01); H01S 5/06837 (2013.01); H01S 5/1231 (2013.01); H01S 5/2275 (2013.01); H01S 5/34306 (2013.01); H01S 2301/176 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor optical device in a mesa stripe type, comprising:
a semiconductor substrate with a projection in a stripe shape extending in a first direction,
the projection constituting at least a portion of a mesa stripe structure;
a quantum well layer in the stripe shape extending in the first direction and on the projection,
the quantum well layer constituting another portion of the mesa stripe structure;
and
a buried layer, adjacent to both sides of the mesa stripe structure in a second direction perpendicular to the first direction, on an upper surface of the semiconductor substrate,
wherein:
the upper surface of the semiconductor substrate extends from a horizontal plane to an inclined surface of the mesa stripe structure and has a first angle respective to the horizontal plane,
the inclined surface extends from the upper surface of the semiconductor substrate to an upright surface of the mesa stripe structure and has a second angle respective to the horizontal plane,
the second angle being greater than the first angle,
the upright surface rises from the inclined surface, and
an area of the mesa stripe structure defined by a plane of the upper surface of the semiconductor substrate, a plane of the inclined surface, and a plane of the upright surface is recrystallized structure.