US 12,136,795 B2
Method for producing photosemiconductor device
Atsushi Era, Tokyo (JP)
Assigned to Mitsubishi Electric Corporation, Tokyo (JP)
Appl. No. 17/600,415
Filed by Mitsubishi Electric Corporation, Tokyo (JP)
PCT Filed Jun. 27, 2019, PCT No. PCT/JP2019/025627
§ 371(c)(1), (2) Date Sep. 30, 2021,
PCT Pub. No. WO2020/261493, PCT Pub. Date Dec. 30, 2020.
Prior Publication US 2022/0190548 A1, Jun. 16, 2022
Int. Cl. H01S 5/02 (2006.01); H01S 5/028 (2006.01); H01S 5/32 (2006.01)
CPC H01S 5/0218 (2013.01) [H01S 5/0203 (2013.01); H01S 5/028 (2013.01); H01S 5/3202 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method of manufacturing an optical semiconductor device, comprising:
a step of forming semiconductor layers on a surface of a substrate;
an etching step of forming a ridge by etching part of the semiconductor layers;
a cleaning step of removing substances having adhered to surfaces of the etched semiconductor layers while feeding a source gas for crystal growth and an etching gas; and
a crystal growth step of forming current blocking layers both sidewalls of the ridge at a processing temperature higher than a temperature in the cleaning step.