US 12,136,692 B2
Method of producing an optoelectronic component and optoelectronic component
Andreas Plößl, Regensburg (DE)
Assigned to OSRAM Opto Semiconductors GmbH, Regensburg (DE)
Appl. No. 17/419,439
Filed by OSRAM Opto Semiconductors GmbH, Regensburg (DE)
PCT Filed Dec. 20, 2019, PCT No. PCT/EP2019/086687
§ 371(c)(1), (2) Date Jun. 29, 2021,
PCT Pub. No. WO2020/144057, PCT Pub. Date Jul. 16, 2020.
Claims priority of application No. 102019100521.3 (DE), filed on Jan. 10, 2019.
Prior Publication US 2022/0077367 A1, Mar. 10, 2022
Int. Cl. H01L 33/62 (2010.01); H01L 25/075 (2006.01); H01L 25/16 (2023.01); H01L 33/00 (2010.01); H01L 33/10 (2010.01); H01L 33/38 (2010.01); H01L 33/44 (2010.01); H01L 33/54 (2010.01)
CPC H01L 33/62 (2013.01) [H01L 25/0756 (2013.01); H01L 33/0093 (2020.05); H01L 33/10 (2013.01); H01L 33/54 (2013.01); H01L 2933/0066 (2013.01)] 14 Claims
OG exemplary drawing
 
1. A method of producing an optoelectronic component comprising:
providing a semiconductor wafer with a functional semiconductor layer that has electronic control elements, and a growth layer;
generating a plurality of recesses in the semiconductor wafer exposing the growth layer in places; and
epitaxially growing a plurality of semiconductor layer stacks on the exposed growth layer, wherein
a surface of the exposed growth layer is used as a growth surface for the semiconductor layer stacks, and
the growth surface is inclined to a main extension plane of the semiconductor wafer, wherein the growth layer is removed such that the first main surfaces of the epitaxial semiconductor layer stacks are exposed and, when the growth layer is removed, a part of the semiconductor layer stacks is removed so that the first main surfaces of the semiconductor layer stacks are planarized.