US 12,136,688 B2
Light conversion device and preparation method thereof, and display device having light conversion device
Shirong Yu, Zhejiang (CN); Yongyin Kang, Zhejiang (CN); and Jianhai Zhou, Zhejiang (CN)
Assigned to Najing Technology Corporation Limited, Zhejiang (CN)
Appl. No. 17/763,666
Filed by Najing Technology Corporation Limited, Zhejiang (CN)
PCT Filed Sep. 23, 2020, PCT No. PCT/CN2020/117237
§ 371(c)(1), (2) Date Mar. 25, 2022,
PCT Pub. No. WO2021/057814, PCT Pub. Date Apr. 1, 2021.
Claims priority of application No. 201910913941.7 (CN), filed on Sep. 25, 2019.
Prior Publication US 2022/0344551 A1, Oct. 27, 2022
Int. Cl. H01L 33/50 (2010.01); H01L 33/00 (2010.01)
CPC H01L 33/505 (2013.01) [H01L 33/005 (2013.01); H01L 2933/0041 (2013.01)] 17 Claims
OG exemplary drawing
 
1. A preparation method of a light conversion device, comprising:
S1, disposing a plurality of pixel isolation structures on a first surface of a substrate layer, a plurality of sub-pixel regions isolated from each other being formed between the pixel isolation structures;
S2, performing a photolithography process n times on the substrate layer sequentially wherein each of the photolithography processes comprises:
forming a quantum dot adhesive layer and a photoresist layer on the substrate layer in sequence, the photoresist layer being located on the quantum dot adhesive layer far away from substrate layer, and a part of the quantum dot adhesive layer filling in bare sub-pixel regions:
exposing and developing the photoresist layer, and exposing at least one sub-pixel region;
in each of the photolithography processes, a number of bare sub-pixel regions after a mth time photolithography process being larger than a number of bare sub-pixel regions after (m+1)th time photolithography process, the bare sub-pixel regions after the mth time photolithography process being filled with a part of the quantum dot adhesive layer formed in the (m+1) time photolithography process, and orthographic projections of patterned quantum dot structures obtained in each of the photolithography processes being not overlapped in the sub-pixel regions,
curing the quantum dot adhesive layers which are remaining and the photoresist layers which are remaining to obtain the patterned quantum dot structures and cured photoresist layers, wherein n>m≥1, and n and m are all positive integers.